The memory effect of nanoscale memristors investigated by conducting scanning probe microscopy methods

• César Moreno,
• Carmen Munuera,
• Xavier Obradors and
• Carmen Ocal

Beilstein J. Nanotechnol. 2012, 3, 722–730, doi:10.3762/bjnano.3.82

• correlation of device rectification (reset) with the voltage employed to induce each particular state. Analytical simulations by using a nonlinear dopant drift within a memristor device explain the experimental I–V bipolar cycles. Keywords: conductive scanning probe micoscopy; memristor; 3-D modes; resistive